1.0(25.4) min. 1.0(25.4) min. .375(9.5) .285(7.2) .052(1.3) .048(1.2) dia. .220(5.6) .197(5.0) dia. * 1 r e p e t i t i v e p e a k r e v e r s e v o l t a g e * 2 r m s v o l t a g e * 3 c o n t i n u o u s r e v e r s e v o l t a g e * 4 m a x i m u m f o r w a r d v o l t a g e @ i = 3 . 0 a f p a r a m e t e r c o n d i t i o n s f o r w a r d r e c t i f i e d c u r r e n t f o r w a r d s u r g e c u r r e n t r e v e r s e c u r r e n t t h e r m a l r e s i s t a n c e d i o d e j u n c t i o n c a p a c i t a n c e s e e f i g . 2 8 . 3 m s s i n g l e h a l f s i n e - w a v e s u p e r i m p o s e d o n r a t e l o a d ( j e d e c m e t h o d e ) s y m b o l m i n . t y p . m a x . u n i t i o i f s m i r c j a a m a o c / w p f 3 . 0 8 0 0 . 5 2 0 o v = v t = 2 5 c r r r m j o v = v t = 1 0 0 c r r r m j j u n c t i o n t o a m b i e n t 2 5 0 3 0 r j a mbr320ng mbr330ng mbr340ng 1 4 2 1 2 8 2 0 3 0 4 0 s y m b o l s v r r m ( v ) v r m s v r ( v ) ( v ) * 1 * 2 * 3 v f ( v ) * 4 MBR350NG mbr360ng 3 5 4 2 5 0 6 0 0 . 7 0 - 5 5 t o + 1 2 5 mbr380ng mbr3100ng 8 0 1 0 0 5 6 7 0 2 0 3 0 4 0 5 0 6 0 8 0 1 0 0 s t o r a g e t e m p e r a t u r e f = 1 m h z a n d a p p l i e d 4 v d c r e v e r s e v o l t a g e t s t g o c + 1 7 5 - 6 5 o ( c ) o p e r a t i n g t e m p e r a t u r e t , j 0 . 5 5 0 . 8 5 - 5 5 t o + 1 5 0 mbr3150ng 1 5 0 1 0 5 1 5 0 mbr3200ng 2 0 0 1 4 0 2 0 0 0 . 9 0 0 . 9 5 mbr320ng thru mbr3100ng schottky barrier rectifier 3.0a leaded type schottky barrier rectifiers - 20v-200v features axial lead type devices for through hole design. low power loss, high efficiency. high current capability, low forward voltage drop. high surge capability. ultra high-speed switching. lead-free parts meet environmental standards of mil-std-19500 /228 ? ? guardring for overvoltage protection. suffix "-h" indicates halogen free parts, ex. mbr320ng-h. ? ? ? ? ? silicon epitaxial planar chip, metal silicon junction. ? ? mechanical data epoxy:ul94-v0 rated flame retardant case : molded plastic, terminals : solder plated, solderable per mil-std-202, method 208 guranteed polarity :color band denotes cathode end mounting position : any weight : 1.10 gram ? ? ? ? ? ? do-201ad approximated do-201ad package outline dimensions in inches and (millimeters) maximum ratings (at t =25 a o c unless otherwise noted) page 1/2 @ 2010 copyright by american first semiconductor
rating and characteristic curves fig.1-typical for w ard current dera ting cur ve a verage for w ard current ,(a) fig.4-typical junction cap acit ance reverse vol t age,(v) junction cap acit ance,(pf) 0.5 1.0 1.5 2.0 2.5 3.0 700 600 500 400 300 200 100 0 .01 .05 .1 .5 1 5 10 50 100 .1 1.0 10 100 fig.5 - typical reverse characteristics reverse leakage current , (ma) 0 20 40 60 80 100 120 140 .01 t =75 c j mbr320ng~mbr340ng MBR350NG~mbr3200ng t =25 c j lead tempera ture,( c) 0 0 20 40 60 80 100 120 140 160 180 200 percent of ra ted peak reverse vol t age,(%) fig.3-maximum non-repetitive for w ard surge current peak for w aard surge current ,(a) 0 40 20 60 100 80 number of cycles a t 60hz 1 10 5 50 100 t =25 c j 8.3ms single half sine w ave jedec method 0.1 1.0 .01 10 inst ant aneous for w ard current ,(a) for w ard vol t age,(v) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 fig.2-typical for w ard characteristics 80~100v 20~40v 50~60v pulse width 300us 1% duty cycle o t =25 c j 3.0 200v 150v mbr320ng thru mbr3100ng page 2/2 www.first-semi.com
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